2SJ632 no.7420-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 2 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --8 a allowable power dissipation p d mounted on a ceramic board (250mm 2 5 0.8mm) 1.5 w tc=25 c 3.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--1a 1.6 2.4 s r ds (on)1 i d =--1a, v gs =--10v 275 360 m w static drain-to-source on-state resistance r ds (on)2 i d =--1a, v gs =--4v 400 560 m w marking : ga continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7420 2SJ632 package dimensions unit : mm 2062a [2SJ632] 32603 ts im ta-3954 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : gate 2 : drain 3 : source sanyo : pcp 4.5 1.6 0.5 0.4 1.5 1.0 2.5 4.25max 3.0 1.5 0.4 0.75 3 2 1 (bottom view) p-channel silicon mosfet ultrahigh-speed switching applications
2SJ632 no.7420-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =--20v, f=1mhz 365 pf output capacitance coss v ds =--20v, f=1mhz 39 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 30 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 24 ns turn-off delay time t d (off) see specified test circuit. 38 ns fall time t f see specified test circuit. 38 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--2a 9 nc gate-to-source charge qgs v ds =--30v, v gs =--10v, i d =--2a 1.7 nc gate-to-drain miller charge qgd v ds =--30v, v gs =--10v, i d =--2a 1.7 nc diode forward voltage v sd i s =--2a, v gs =0 --0.84 --1.2 v switching time test circuit pw=10 m s d.c. 1% 0v --10v v in p. g 50 w g s i d = --1a r l =30 w v dd = --30v v out 2SJ632 v in d static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds it05810 i d -- v gs it05811 0 0 --2.0 --2.5 --3.0 --3.5 --4.0 --1.0 --0.5 --1.0 --0.5 --1.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 v ds = --10v --2.0 --1.5 --3.0 --3.5 --2.5 --1.0 --0.5 0 --4.0 0 --1.0 --0.5 --2.0 --1.5 --3.0 --3.5 --2.5 --4.0 0 --2 --4 --6 700 750 800 100 150 200 250 300 350 400 450 500 550 600 650 --8 --20 --10 --12 --14 --16 --18 r ds (on) -- v gs it05812 v gs = --3.0v --3.5v --4.0v --5.0v --6.0v --8.0v --10.0v tc= --25 c tc=75 c 25 c --25 c 75 c 25 c tc=25 c i d = --1a 300 350 400 450 500 550 600 650 700 100 150 200 250 r ds (on) -- tc it05813 --60 --20 --40 20 0 40 60 80 100 120 140 i d = -- 1 a, v gs = -- 10v i d = -- 1 a, v gs = -- 4v case temperature, tc -- c
2SJ632 no.7420-3/4 drain-to-source voltage, v ds -- v drain current, i d -- a diode forward voltage, v sd -- v forward drain current, i f -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w drain current, i d -- a forward transfer admittance, ? y fs ? -- s total gate charge, qg -- nc gate-to-source voltage, v gs -- v it05815 i f -- v sd --0.6 --0.8 --0.4 --1.0 --1.2 --0.2 --0.01 --0.1 2 5 --1.0 --10 3 7 2 5 3 2 3 7 5 7 2 10 --1.0 5 23 23 5 7 3 5 2 7 3 5 7 3 2 100 sw time -- i d it05816 --0.1 a s o 2 3 5 7 2 3 5 7 2 3 5 7 2 --10 --1.0 --0.1 --0.01 --0.01 23 57 23 57 23 57 7 25 --100 --0.1 --1.0 --10 3 it05819 i dp = --8a i d = --2a <10 m s 100 m s dc operation 1ms 100ms 10ms operation in this area is limited by r ds (on). --25 c 25 c tc=75 c 0 100 5 7 2 3 5 7 2 1000 3 10 --30 --10 --15 --20 --25 -- 5 ciss, coss, crss -- v ds it05817 ciss coss crss f=1mhz 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 p d -- ta it05820 --10 -- 4 -- 3 -- 2 -- 1 -- 8 -- 9 -- 7 -- 6 -- 5 0 012345678910 v gs -- qg it05818 it05814 ? y fs ? -- i d --0.01 23 23 7 57 5 7 5 --1.0 --0.1 2 --10 5 7 5 7 3 2 2 1.0 0.1 10 3 75 c 3 v ds = --10v v gs =0 tc= --25 c 25 c v dd = --30v v gs = --10v v ds = --30v i d = --2a t d (on) t d (off) t r t f 4.0 3.5 2.5 3.0 2.0 1.0 1.5 0.5 0 0 20 40 60 80 100 120 140 160 p d -- tc it05821 tc=25 c single pulse mounted on a ceramic board(250mm 2 5 0.8mm)
2SJ632 no.7420-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2003. specifications and information herein are subject to change without notice. ps
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